Light emitting device

ABSTRACT

Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. §119 to Korean PatentApplication No. 10-2014-0147926, filed in Korea on Oct. 29, 2014, whichare hereby incorporated in its entirety by reference as if fully setforth herein.

TECHNICAL FIELD

Embodiments relate to a light emitting device.

BACKGROUND

Group III-V compound semiconductor materials such as GaN, AlGaN, and thelike have various advantages such as wide, easily adjustable energy bandgaps, and thus have been widely used for electronic devices in the fieldof optoelectronics.

Particularly, light emitting devices using Group III-V or II-VI compoundsemiconductor materials, such as light emitting diodes or laser diodes,have advantages in that they may be used to realize various colors suchas red, green, blue, and ultraviolet (UV) colors with the development ofthin film growth technology and device materials, and may also be usedto realize highly effective white light beams by making use offluorescent materials or combining colors, and have low powerconsumption, semi-permanent lifespan, rapid response time, safety, andenvironmental friendliness, compared to conventional light sources suchas fluorescent lamps, incandescent lamps, etc.

Therefore, the light emitting devices have been increasingly applied totransmitter modules for optical communication systems, light emittingdiode backlight units replacing cold cathode fluorescence lamps (CCFLs)constituting backlight units for liquid crystal display (LCD) devices,white light emitting diode lightings capable of replacing fluorescentlamps or incandescent lamps, car headlights, and traffic lights.

FIG. 1 is a diagram showing a conventional light emitting device.

A light emitting device 100 includes a substrate 110 formed of sapphire,and the like, a light emitting structure 120 arranged on the substrate110 and including a first conductive semiconductor layer 122, an activelayer 124, and a second conductive semiconductor layer 126, and a firstelectrode 160 and a second electrode 170 arranged on the firstconductive semiconductor layer 122 and second conductive semiconductorlayer 126, respectively.

As electrons injected through the first conductive semiconductor layer122 and holes injected through the second conductive semiconductor layer126 are combined at the active layer 124, the light emitting device 100emits light with energy determined by an innate energy band of amaterial used to form the active layer 124. The light emitted from theactive layer 124 may have varying colors, depending on compositions ofthe material forming the active layer 124. In this case, the light mayinclude blue light, UV or deep UV rays, etc.

The light emitting device 100 may be arranged in a light emitting devicepackage. In this case, light with a first wavelength region emitted fromthe light emitting device 100 may excite a phosphor, which then may emitlight with a second wavelength region as the phosphor is excited by thelight with the first wavelength region. Here, the phosphor may beincluded in a molding part surrounding the light emitting device 100, ormay be arranged in the form of a phosphor film.

However, the above-described conventional light emitting device has thefollowing drawbacks.

In the light emitted from the active layer 124, light traveling towardthe second electrode 170 may be absorbed into the second electrode 170,resulting in degraded light efficiency of the light emitting device 100.

SUMMARY

Embodiments provide a light emitting device having improved lightefficiency.

In one embodiment, a light emitting device includes a light emittingstructure including a first conductive semiconductor layer, an activelayer, and a second conductive semiconductor layer, a first currentblocking layer and a second current blocking layer arranged on the lightemitting structure to be separated from each other, a light-transmittingconductive layer arranged on the first current blocking layer, thesecond current blocking layer and the light emitting structure, a firstelectrode and a second electrode electrically coupled to the firstconductive semiconductor layer and the second conductive semiconductorlayer, respectively, a through hole formed through thelight-transmitting conductive layer, the second conductive semiconductorlayer and the active layer to a portion of the first conductivesemiconductor layer, and a through electrode arranged inside the throughhole, wherein the through electrode does not overlap the first currentblocking layer in a vertical direction.

The light emitting device may further include an insulation layerarranged between the first electrode and the first current blockinglayer and between the second electrode and the second current blockinglayer.

The through hole may be formed through the insulation layer.

The through electrode and the first current blocking layer may belinearly arranged in a horizontal direction.

The insulation layer may be arranged in the through hole to extendaround the through electrode.

The first electrode may include a first bonding pad and a firstbranched-finger electrode.

The first bonding pad may be arranged at a first edge region of thelight emitting device.

At least a portion of the first branched-finger electrode may overlapthe through electrode and the first current blocking layer in a verticaldirection.

The through electrode may have a length smaller than a distance betweenneighboring through electrodes.

The second electrode may include a second bonding pad and a secondbranched-finger electrode.

The second bonding pad may be arranged at a second edge region of thelight emitting device.

A portion of the second branched-finger electrode may overlap the secondcurrent blocking layer in a vertical direction.

A portion of the insulation layer may be opened to form an open region,and the light-transmitting conductive layer may be exposed through theopen region.

The light-transmitting conductive layer and the second electrode may bebrought into direct contact at the open region.

The open region and the through electrode may be alternately arranged ina horizontal direction.

At least one of the first current blocking layer and the second currentblocking layer may be a distributed Bragg reflector (DBR) or anomni-directional reflector (ODR).

In another embodiment, a light emitting device includes a light emittingstructure comprising a first conductive semiconductor layer, an activelayer, and a second conductive semiconductor layer, a first currentblocking layer and a second current blocking layer having a DBR or ODRstructure and arranged on the light emitting structure to be separatedfrom each other, a light-transmitting conductive layer arranged on thefirst current blocking layer, the second current blocking layer and thelight emitting structure and having the smallest thickness at regionscorresponding respectively to the first current blocking layer and thesecond current blocking layer, a first electrode and a second electrodeelectrically coupled to the first conductive semiconductor layer and thesecond conductive semiconductor layer, respectively, a through holeformed through the light-transmitting conductive layer, the secondconductive semiconductor layer, and the active layer to a portion of thefirst conductive semiconductor layer, and a through electrode arrangedin the through hole.

The first current blocking layer may have a plurality of portionsarranged spaced apart from each other.

The through hole may be formed through the light-transmitting conductivelayer, the second conductive semiconductor layer, and the active layerto a portion of the first conductive semiconductor layer, the lightemitting device may further include a through electrode arranged in thethrough hole, and a spacing between the portions constituting the firstcurrent blocking layer may be the same as a length of the through hole.

In still another embodiment, a light emitting device includes a lightemitting structure comprising a first conductive semiconductor layer, anactive layer, and a second conductive semiconductor layer, a firstcurrent blocking layer and a second current blocking layer arranged onthe light emitting structure to be separated from each other, alight-transmitting conductive layer arranged on the first currentblocking layer, the second current blocking layer and the light emittingstructure, a first electrode and a second electrode electrically coupledto the first conductive semiconductor layer and the second conductivesemiconductor layer, respectively, and an insulation layer arrangedbetween the first electrode and the first current blocking layer andbetween the second electrode and the second current blocking layer,wherein a through hole is formed through the insulation layer, thelight-transmitting conductive layer, the second conductive semiconductorlayer, and the active layer to a portion of the first conductivesemiconductor layer, the through hole does not overlap the first currentblocking layer in a vertical direction, a portion of the insulationlayer is opened to form an open region, and the light-transmittingconductive layer is exposed through the open region, and the open regionand the through electrode are alternately arranged in a horizontaldirection.

BRIEF DESCRIPTION OF THE DRAWINGS

Arrangements and embodiments may be described in detail with referenceto the following drawings in which like reference numerals refer to likeelements and wherein:

FIG. 1 is a diagram showing a conventional light emitting device;

FIGS. 2A and 2B are cross-sectional views showing one embodiment of alight emitting device;

FIGS. 3A to 3Q are cross-sectional views showing one embodiment of amethod of manufacturing a light emitting device;

FIGS. 4A to 4H are diagrams showing another embodiment of a method ofmanufacturing a light emitting device;

FIGS. 5A and 5B are diagrams showing one embodiment of a currentblocking layer of the light emitting device;

FIGS. 6A and 6B show simulation and measurement results in which opticalpowers of light emitting devices according to embodiments are simulatedand measured in certain wavelength regions;

FIGS. 7A and 7B are diagrams showing wavelength distributions andoptical powers of light emitted from the light emitting device accordingto one embodiment and a conventional light emitting device,respectively; and

FIG. 8 is a diagram showing one embodiment of a light emitting devicepackage having the above-described light emitting device arrangedtherein.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Hereinafter, embodiments will be described with reference to the annexeddrawings.

It will be understood that when an element is referred to as being “on”or “under” another element, it can be directly on/under the element, andone or more intervening elements may also be present. When an element isreferred to as being “on” or “under”, “under the element” as well as “onthe element” can be included based on the element.

FIGS. 2A and 2B are cross-sectional views showing one embodiment of alight emitting device.

FIGS. 2A and 2B are cross-sectional views of one light emitting device200, as viewed in different directions.

The light emitting device 200 as shown in FIG. 2A includes a substrate210, a light emitting structure 220, a first current blocking layer 232,a second current blocking layer 236, a light-transmitting conductivelayer 240, an insulation layer 250, a first electrode 260, and a secondelectrode 270.

The substrate 210 may be formed of a carrier wafer or a materialsuitable for growth of semiconductor materials, and may also be formedof a material showing excellent thermal conductivity. In this case, thesubstrate 210 may include a conductive substrate, or an insulatingsubstrate. For example, the substrate 210 may be formed of at least oneselected from the group consisting of sapphire (Al₂O₃), SiO₂, SiC, Si,GaAs, GaN, ZnO, GaP, InP, Ge, and Ga₂O₃.

When the substrate 210 is formed of sapphire, and the like, and thelight emitting structure 220 including GaN or AlGaN is arranged on thesubstrate 210, a lattice mismatch between GaN or AlGaN and sapphire isvery large, and a difference in thermal expansion coefficient betweenGaN or AlGaN and sapphire is significantly high, which leads todislocation causing decrease in crystallinity, occurrence of melt-backs,cracks, and pits, interior surface morphology, and the like.Accordingly, a buffer layer (not shown) may be formed of AlN, etc.

Since a pattern is formed on a surface of the substrate 210 as shown inthe drawings, light emitted from the light emitting structure 220 totravel toward the substrate 210 may be reflected on the pattern.

The light emitting structure 220 may include a first conductivesemiconductor layer 222, an active layer 224, and a second conductivesemiconductor layer 226.

The first conductive semiconductor layer 222 may be realized using GroupIII-V and Group II-VI compound semiconductor materials, etc., and may bedoped with a first conductive dopant. The first conductive semiconductorlayer 222 may be formed of at least one selected from the groupconsisting of semiconductor materials having a composition expression ofAl_(x)In_(y)Ga_((1-x-y))N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1), for example,AlGaN, GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the first conductive semiconductor layer 222 is an n-typesemiconductor layer, the first conductive dopant may include an n-typedopant such as Si, Ge, Sn, Se, Te, etc. The first conductivesemiconductor layer 222 may be formed in a single-layered ormultilayered structure, but the disclosure is not limited thereto.

The active layer 224 may be arranged between the first conductivesemiconductor layer 222 and the second conductive semiconductor layer226, and may have one structure selected from the group consisting of asingle well structure, a multiple well structure, a single quantum wellstructure, a multiple quantum well (MQW) structure, a quantum dotstructure, and a quantum wire structure.

The active layer 224 may be formed in at least one pair structure of awell layer and a barrier layer, for example, AlGaN/AlGaN, InGaN/GaN,InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs(InGaAs)/AlGaAs, andGaP(InGaP)/AlGaP, using a Group III-V compound semiconductor material,but the disclosure is not limited thereto.

The well layer may be formed of a material having a lower energy bandgap than the barrier layer.

The second conductive semiconductor layer 226 may be formed of asemiconductor compound. The second conductive semiconductor layer 226may be realized using Group III-V and Group II-VI compound semiconductormaterials, etc., and may be doped with a second conductive dopant. Thesecond conductive semiconductor layer 226 may, for example, be formed ofat least one selected from the group consisting of semiconductormaterials having a composition expression of In_(x)Al_(y)Ga_(1-x-y)N(0≦x≦1, 0≦y≦1, and 0≦x+y≦1), for example, AlGaN, GaNAlInN, AlGaAs, GaP,GaAs, GaAsP, and AlGaInP. For example, the second conductivesemiconductor layer 226 may be formed of Al_(x)Ga_((1-x))N.

When the second conductive semiconductor layer 226 is a p-typesemiconductor layer, the second conductive dopant may include a p-typedopant such as Mg, Zn, Ca, Sr, Ba, etc. The second conductivesemiconductor layer 226 may be formed in a single-layered ormultilayered structure, but the disclosure is not limited thereto.

Although not shown, an electron blocking layer may be arranged betweenthe active layer 224 and the second conductive semiconductor layer 226.The electron blocking layer may be formed in a superlattice structure.In the superlattice structure, for example, AlGaN doped with the secondconductive dopant may be arranged, and a plurality of layers formed ofGaN and having different composition ratios of aluminum may also bealternately arranged.

The first current blocking layer 232 and the second current blockinglayer 236 may be arranged on the second conductive semiconductor layer226 to be spaced apart from each other. In this case, the first currentblocking layer 232 and the second current blocking layer 236 may beselectively arranged on a portion of the second conductive semiconductorlayer 226, and may be made of an insulating material.

The light-transmitting conductive layer 240 may be arranged on thesecond conductive semiconductor layer 226, the first current blockinglayer 232, and the second current blocking layer 236. In this case, thelight-transmitting conductive layer 240 may be made of indium tin oxide(ITO), etc. However, since the second conductive semiconductor layer 226has poor current spreading characteristics, the light-transmittingconductive layer 240 may receive a current from the second electrode270.

The light-transmitting conductive layer 240 may have a constantthickness t₁, and thus a height of the light-transmitting conductivelayer 240 may be greater at regions corresponding to the first currentblocking layer 232 and the second current blocking layer 236 than theother regions thereof.

The insulation layer 250 may be arranged on the light-transmittingconductive layer 240. In this case, a portion of the insulation layer250 may be opened so that the light-transmitting conductive layer 240 isexposed through an upper region of the second current blocking layer236. The insulation layer 250 may be made of an oxide or a nitride.Specifically, the insulation layer 250 may be formed as a silicon oxide(SiO₂) layer, an oxynitride layer, or an aluminum oxide layer.

In addition, since the insulation layer 250 may be formed in a constantthickness t₂ at a region other than the above-described open region, theheight of the insulation layer 250 may be greater at a regioncorresponding to the first current blocking layer 232 than the otherregions thereof.

The first electrode 260 and the second electrode 270 may be arranged onthe insulation layer 250 to be spaced apart from each other. In thiscase, the first electrode 260 and the second electrode 270 may bearranged on regions corresponding to the first current blocking layer232 and the second current blocking layer 236, respectively.

The insulation layer 250 may be arranged between the first electrode 260and the light-transmitting conductive layer 240, or the second electrode270 and the light-transmitting conductive layer 240 may be brought intodirect contact at the above-described open region of the insulationlayer 250.

FIG. 2A is a cross-sectional view taken along line A-A′ of the lightemitting device 200, and FIG. 2B is a cross-sectional view taken alongline B-B′ of the light emitting device 200.

The substrate 210 and the light emitting structure 220 have the samestructure as the light emitting device 200 as shown in FIG. 2A, but aredifferent from the light emitting device 200 in that the first currentblocking layer 232 is not arranged in a direction taken along line B-B′.

The second current blocking layer 236 may be arranged on the secondconductive semiconductor layer 226, and the light-transmittingconductive layer 240 may be arranged on the second conductivesemiconductor layer 226 and the second current blocking layer 236.

The light-transmitting conductive layer 240 may have a constantthickness t₁, and thus a height of the light-transmitting conductivelayer 240 may be greater at a region corresponding to the second currentblocking layer 236 than the other regions thereof.

The insulation layer 250 may be arranged on the light-transmittingconductive layer 240. In this case, the insulation layer 250 may have aconstant thickness t₂, and thus a height of the insulation layer 250 maybe greater at a region corresponding to the second current blockinglayer 236 in a vertical direction than the other regions thereof.

Additionally, the second electrode 270 may be arranged on the insulationlayer 250. In this case, the second electrode 270 may be arranged tocorrespond to the second current blocking layer 236 in a verticaldirection. In addition, the light-transmitting conductive layer 240 andthe second electrode 270 may not be brought into direct contact, unlikethat in FIG. 2A.

In addition, a through hole is formed downward from the first electrode260, as shown in FIG. 2B. The through hole may be formed through thelight-transmitting conductive layer 240, the second conductivesemiconductor layer 226, and the active layer 224 so that the throughhole spans from the insulation layer 250 to a portion of the firstconductive semiconductor layer 222.

Further, the insulation layer 250 may be arranged on inner sidewalls ofthe through hole to extend to the inner sidewalls. The first electrode260 is formed on the through hole. In this case, since the firstelectrode 260 is arranged in the through hole to extend to an inner partof the through hole, the first conductive semiconductor layer 222 andthe first electrode 260 may be brought into direct electrical contact ata bottom surface of the through hole. Here, a portion of the firstelectrode 260 arranged inside the through hole may be referred to as athrough electrode.

FIGS. 3A to 3P are diagrams showing one embodiment of a method ofmanufacturing a light emitting device.

As shown in FIG. 3A, the first light emitting structure 220 is allowedto grow on the substrate 210.

The substrate 210 may be formed of sapphire as described above, and,although not shown, the above-described buffer layer (not shown) may beallowed to grow prior to growth of the light emitting structure 220.

The first conductive semiconductor layer 222 may be allowed to growusing a method such as chemical vapor deposition (CVD), molecular beamepitaxy (MBE), sputtering, or hydride vapour phase epitaxy (HVPE). Thefirst conductive semiconductor layer 222 has the same composition asdescribed above, and bis(ethyl cyclopentadienyl)magnesium((EtCp₂Mg){Mg(C₂H₅C₅H₄)₂}) including p-type impurities such as trimethylgallium gas (TMGa), ammonia gas (NH₃), nitrogen gas (N₂), and magnesium(Mg) may be injected into a chamber at a temperature of approximately1,000° C. to form a p-type GaN layer, but the disclosure is not limitedthereto.

In addition, the active layer 224 is allowed to grown on the firstconductive semiconductor layer 222. For the active layer 224, forexample, trimethyl gallium gas (TMGa), ammonia gas (NH₃), nitrogen gas(N₂), and trimethyl indium gas (TMIn) may be injected at a temperatureof approximately 700° C. to 800° C. to form a MQW structure, but thedisclosure is not limited thereto.

Additionally, the second conductive semiconductor layer 226 is allowedto grown on the active layer 224. In this case, the second conductivesemiconductor layer 226 may have the same composition as describedabove.

The second conductive semiconductor layer 226 is allowed to grown bysupplying Zn and O₂ at a temperature of approximately 500° C., and maybe doped with an n-type dopant. For example, the second conductivesemiconductor layer 226 may be doped with Si, Ge, Sn, Se, Te, etc. Thesecond conductive semiconductor layer 226 may be formed using a methodsuch as metal organic (MO)-CVD, plasma-enhanced (PE)-CVD, or sputtering,and Al, Fe and Ga may be added thereto.

In addition, as shown in FIGS. 3B and 3C, the first current blockinglayer 232 and the second current blocking layer 236 are allowed to grownon the second conductive semiconductor layer 226.

The first current blocking layer 232 and the second current blockinglayer 236 may be made of an insulating material. Specifically, the firstcurrent blocking layer 232 and the second current blocking layer 236 maybe a distributed Bragg reflector (DBR) or an omni-directional reflector(ODR), and thus specific configurations thereof will be described below.

The first current blocking layer 232 and the second current blockinglayer 236 may be selectively formed using a mask, or may be formed byforming one current blocking layer on an entire surface of the secondconductive semiconductor layer 226 and selectively removing the currentblocking layer.

A section of the first current blocking layer 232 and the second currentblocking layer 236 is shown in FIG. 3B. Here, a width d₁ of the firstcurrent blocking layer 232 and a width d₂ of the second current blockinglayer 236 may be the same as or different from each other. In addition,the first current blocking layer 232 may be formed to have a pattern. Inthis case, a length d₃ of one portion of the first current blockinglayer 232 formed to have the pattern may be larger than a spacing d₄between respective portions of the first current blocking layer 232, butthe disclosure is not particularly limited thereto. Here, the spacing d₄between the respective portions of the first current blocking layer 232may be a length of the through hole or the through electrode.

A section taken along line A-A′ in FIG. 3B is shown in FIG. 3C. Here, awidth w₁ of the first current blocking layer 232 and a width w₂ of thesecond current blocking layer 236 may be the same as or different fromeach other.

In addition, as shown in FIGS. 3D to 3F, the light-transmittingconductive layer 240 may be formed on the second conductivesemiconductor layer 226 on which the first current blocking layer 232and the second current blocking layer 236 are formed.

A section taken along line A-A′ in FIG. 3D is shown in FIG. 3E, and asection taken along line B-B′ in FIG. 3D is shown in FIG. 3F.

As shown in FIG. 3E, since the light-transmitting conductive layer 240may be arranged on the first current blocking layer 232 and the secondcurrent blocking layer 236 so that the light-transmitting conductivelayer 240 has a constant thickness t₁, a height of thelight-transmitting conductive layer 240 may be greater at regionscorresponding to the first current blocking layer 232 and the secondcurrent blocking layer 236 than the other regions thereof.

The second current blocking layer 236 may be integrally arranged, andthe first current blocking layer 232 may have a plurality of portionsspaced at constant intervals, as shown in FIGS. 3B and 3D. In addition,as shown in FIG. 3F, the second current blocking layer 236 may be formedon the second conductive semiconductor layer 226, but the first currentblocking layer 232 may not be formed on the second conductivesemiconductor layer 226, as viewed from a section taken along line B-B′in FIG. 3D.

Additionally, as shown in FIGS. 3G and 3H, a through hole may be formedthrough the second conductive semiconductor layer 226 and the activelayer 224 so that the through hole spans from the light-transmittingconductive layer 240 to a portion of the first conductive semiconductorlayer 222.

As shown in FIG. 3G, through holes may be formed at regions between thefirst current blocking layers 232. A section taken along line B-B′ inFIG. 3G is shown in FIG. 3H. In this case, a section taken along lineA-A′ in FIG. 3G may be the same in FIG. 3E since the through holes arenot formed.

In addition, as shown in FIGS. 3I to 3K, the insulation layer 250 may beformed on the light-transmitting conductive layer 240.

As shown in FIG. 3I, the insulation layer 250 may be formed on thelight-transmitting conductive layer 240 so that the insulation layer 250has a constant thickness. A section taken along line A-A′ in FIG. 3I isshown in FIG. 3J. Here, since the insulation layer 250 is formed on thelight-transmitting conductive layer 240 so that the insulation layer 250has a constant thickness t₂, a height of the insulation layer 250 may begreater at regions corresponding to the first current blocking layer 232and the second current blocking layer 236 than the other regionsthereof.

A section taken along line B-B′ in FIG. 3I is shown in FIG. 3K. Here,the insulation layer 250 may be arranged on inner sides of the throughhole to extend to the inner sides of the through hole. In this case, thefirst conductive semiconductor layer 222 may be exposed through a bottomsurface of the through hole.

As shown in FIGS. 3J and 3K, the through hole does not overlap the firstcurrent blocking layer 232 in a vertical direction. In this case, itcould be seen that, since the through hole and the first currentblocking layer 232 are linearly arranged in a horizontal direction,shapes of the through hole and the first current blocking layer 232 aresimilar to that of the first electrode 260 shown in FIG. 3N, as viewedin a horizontal direction.

In addition, as shown in FIGS. 3L and 3M, an open region is formed onthe second current blocking layer 236 in the insulation layer 250. Here,the above-described open region may be alternately arranged with thethrough holes or through electrodes in a horizontal direction withoutfacing the through holes or through electrodes, as shown in FIG. 3L.

As shown in FIG. 3L and FIG. 3N as will be described later, the secondcurrent blocking layer 236 is not shown to correspond to the open regionfor the sake of convenience of description, but the light-transmittingconductive layer 240 and the second current blocking layer 236 may beactually arranged below the open region.

As shown in FIG. 3L, a length d₆ of one of the open regions, and alength d₅ between the respective open regions through which the secondcurrent blocking layer 236 is exposed may be the same as or differentfrom each other.

FIG. 3M is a cross-sectional view taken along line A-A′ in FIG. 3L.Here, the light-transmitting conductive layer 240 may be exposed sincethe insulation layer 250 is removed from a region corresponding to thesecond current blocking layer 236 in a vertical direction using a methodsuch as etching. In this case, a section taken along line B-B′ in FIG.3L may be the same in FIG. 3K.

In addition, as shown in FIG. 3N, the first electrode 260 and the secondelectrode 270 are arranged using a method such as vapor deposition. Thefirst electrode 260 and the second electrode 270 may be formed in asingle-layered or multilayered structure to include at least oneselected from the group consisting of aluminum (Al), titanium (Ti),chromium (Cr), nickel (Ni), copper (Cu), and gold (Au).

The first electrode 260 may include a first bonding pad 262 and a firstbranched-finger electrode 266, and the second electrode 270 may includea second bonding pad 272 and a second branched-finger electrode 276.

The first bonding pad 262 and the second bonding pad 272 may be arrangedon first and second edge regions of the light emitting device,respectively, and bonded to the first and second edge regions by meansof wires. In this case, the first and second edge regions may be regionson facing corners, as shown in FIG. 3N.

In addition, as shown in FIG. 3N, the first branched-finger electrode266 may be arranged on a region which overlap the through hole (throughelectrode) and the first current blocking layer 232 in a verticaldirection.

The first electrode 260 and the second electrode 270 may be formed ofthe above-listed materials using a method such as vapor deposition. Inthis case, the first electrode 260 and the second electrode 270 may bedeposited to correspond to the first current blocking layer 232 and thesecond current blocking layer 236, respectively.

As shown in FIG. 3N, a portion of the second branched-finger electrode276 may be arranged to overlap the second current blocking layer 236 ina vertical direction.

Cross-sectional views taken along lines A-A′, B-B′, and C-C′ of thefinished light emitting device are shown in FIGS. 3O, 3P, and 3Q,respectively. Here, the light emitting device shown in FIGS. 3O and 3Pis the same as the light emitting device 200 shown in FIGS. 2A and 2B.

In the light emitting device 200 according to one embodiment, the secondcurrent blocking layer 236, the light-transmitting conductive layer 240,and the insulation layer 250 may be arranged between the secondconductive semiconductor layer 226 and the second electrode 270, and thesecond current blocking layer 236 and the light-transmitting conductivelayer 240 may be arranged between the second conductive semiconductorlayer 226 and the second electrode 270 when the light-transmittingconductive layer 240 is in an open region.

In addition, the first electrode 260 may be brought into directelectrical contact with the first conductive semiconductor layer 222through the through hole formed at a region corresponding to the firstconductive semiconductor layer 222. Additionally, the first currentblocking layer 232, the light-transmitting conductive layer 240, theinsulation layer 250, and the first electrode 260 may be arranged on thefirst current blocking layer 232 in a region in which the through holeis not formed.

A cross-sectional view taken along line C-C′ of the light emittingdevice is shown in FIG. 3Q. A section of a neighboring region of thefirst electrode 260 shown in FIG. 3Q is similar to a section shown inFIG. 3P, and a section of a neighboring region of the second electrode270 is similar to a section shown in FIG. 3O.

FIGS. 4A to 4H are diagrams showing another embodiment of a method ofmanufacturing a light emitting device. Hereinafter, configurations ofthe method of manufacturing a light emitting device according to oneembodiment, which are different from the above-described embodiments,will be mainly described for clarity.

The light-transmitting conductive layer 240 may be formed on the secondconductive semiconductor layer 226 on which the first current blockinglayer 232 and the second current blocking layer 236 are formed. Asection taken along line A-A′ is shown in FIG. 4A, and a section takenalong line B-B′ is shown in FIG. 4B.

As shown in FIG. 4A, since the transmitting conductive layer 240 isarranged on the first current blocking layer 232 and the second currentblocking layer 236 so that the light-transmitting conductive layer 240has a thickness t₃. Here, the thickness t₃ may be the same as ordifferent from the thickness t₁ shown in FIG. 3E. Unlike theabove-described embodiments, the transmitting conductive layer 240 maynot have a constant thickness since a top surface of thelight-transmitting conductive layer 240 is formed to be flush with eachother. Therefore, the above-described thickness t₃ may be a thickness ofa region of the light-transmitting conductive layer 240 on which thefirst current blocking layer 232 and the second current blocking layer236 are not arranged.

In addition, the light-transmitting conductive layer 240 may have thesmallest thickness at regions corresponding to the first currentblocking layer 232 and the second current blocking layer 236 in avertical direction.

Additionally, as shown in FIG. 4C, a through hole may be formed throughthe second conductive semiconductor layer 226 and the active layer 224so that the through hole spans from the light-transmitting conductivelayer 240 to a portion of the first conductive semiconductor layer 222.

A cross-sectional view taken along line B-B′ of the light emittingdevice is shown in FIG. 4C. Here, the through hole may not be formed ina cross-sectional view taken along line A-A′ of the light emittingdevice.

In addition, as shown in FIGS. 4D and 4E, the insulation layer 250 maybe formed on the light-transmitting conductive layer 240.

A section taken along line A-A′ of the light emitting device is shown inFIG. 4D. Here, the insulation layer 250 may be formed on thelight-transmitting conductive layer 240 so that the insulation layer 250has a constant thickness t₄. In this case, the thickness t₄ may be thesame as or different from the thickness t₂ of the insulation layer 250according to the above-described embodiments.

A section taken along line B-B′ of the light emitting device is shown inFIG. 4E. Here, the insulation layer 250 may be arranged on inner sidesof the through hole to extend to the inner sides of the through hole. Inthis case, the first conductive semiconductor layer 222 may be exposedthrough a bottom surface of the through hole.

Additionally, as shown in FIG. 4F, an open region is formed in a regionof the insulation layer 250 corresponding to the second current blockinglayer 236. Here, the above-described open region may be alternatelyarranged with the through hole or through electrode without facing thethrough hole or through electrode in a horizontal direction (see FIG.3L)

Cross-sectional views taken along lines A-A′ and B-B′ of the finishedlight emitting device are shown in FIGS. 4G and 4H, respectively.

As shown in FIG. 4G, since the second electrode 270 is arranged on theabove-described open region of the insulation layer 250, a bottomsurface of the second electrode 270 comes in contact with thelight-transmitting conductive layer 240, and some of sides of the secondelectrode 270 come in contact with the insulation layer 250. In thiscase, since the first electrode 260 is arranged on a surface of theinsulation layer 250, the first electrode 260 may be electricallyseparated from the light-transmitting conductive layer 240.

As shown in FIG. 4H, since the second electrode 270 is arranged on asurface of the insulation layer 250, the second electrode 270 may beelectrically separated from the light-transmitting conductive layer 240,and the first electrode 260 may come in direct electrical contact withthe first conductive semiconductor layer 222 via the through hole.

FIGS. 5A and 5B are diagrams showing one embodiment of a currentblocking layer of the light emitting device.

A current blocking layer 300 a may be either the first current blockinglayer 232 or the second current blocking layer 236. The current blockinglayer 300 a may be a DBR or an ODR. Here, the current blocking layer 300a may be DBR when a plurality of insulation layers are alternatelyarranged, the current blocking layer 300 a may be an ODR when insulationlayers and conductive layers are alternately arranged. In this case, theabove-described conductive layer may be made of a metal.

As shown in FIG. 5A, the current blocking layer 300 a may include firstlayers 310 and second layers 320 alternately arranged therein. Each ofthe first layers 310 and the second layers 320 may include an insulatingmaterial. By way of example, each of the first layers 310 and the secondlayers 320 may include TiO₂, SiO₂, etc.

For example, TiO₂ having a refractive index of 2.4 to 3.0 may be used inthe first layers 310, and SiO₂ having a refractive index of 1.4 to 1.45may be used in the second layers 320.

The first layers 310 and the second layers 320 may be arranged toinclude SiO₂, Si_(x)O_(y), AlAs, GaAs, Al_(x)In_(y)P, Ga_(x)In_(y)P, andthe like in addition to the above-described combinations.

As shown in FIG. 5B, the current blocking layer 300 a may include firstlayers 310, second layers 320 and third layers 330 alternately arrangedtherein. Each of the first layers 310, the second layers 320, and thethird layers 330 may include GaN, GaP, SiO₂, RuO₂, Ag, etc. For example,GaP may be used in the first layers 310, SiO₂ may be used in the secondlayers 320, and Ag may be used in the third layers 330. In this case,the current blocking layer 300 a may serve as an ODR.

In the above-described light emitting device, the first current blockinglayer and the second current blocking layer may be formed as reflectivelayers such as a DBR or an ODR to reflect light emitted from the activelayer and traveling toward the first electrode or electrode, therebypreventing the light from being absorbed into the first or secondelectrode.

In addition, as shown in FIG. 2A, the insulation layer is arranged onthe first current blocking layer, as viewed from a section taken alongline A-A′ of the light emitting device, and the insulation layer isarranged on the second current blocking layer, as viewed from a sectiontaken along line B-B′. Such a structure may prevent an optical powerfrom decreasing in a certain wavelength region.

FIGS. 6A and 6B show simulation and measurement results in which opticalpowers of light emitting devices according to embodiments are simulatedand measured in certain wavelength regions.

It could be seen that the optical power is dramatically lowered in awavelength region of approximately 450 nm in the conventional lightemitting device indicated by dark line in FIGS. 6A and 6B, but theoptical power is not dramatically lowered in the light emitting deviceindicated by blurred line.

The light emitting device according to one embodiment may have a pointcontact structure in which the first electrode and the second electrodecome in contact with the first conductive semiconductor layer and thelight-transmitting conductive layer, respectively, at the through holeand the open region. In this case, a DBR or an ODR may be used as thecurrent blocking layer. Since the insulation layer is arranged at aregion other than the through hole and the open region, a degree ofabsorption of light reflected on the DBR or ODR, particularly lightwithin a blue wavelength region, may be reduced, compared to theconventional light emitting device.

FIGS. 7A and 7B are diagrams showing wavelength distributions andoptical powers of light emitted from the light emitting device accordingto one embodiment and a conventional light emitting device,respectively.

A left semicircular region of FIG. 7A is a diagram showing a wavelengthdistribution of the light emitting device in which the current blockinglayer is formed of silicon oxide (SiO₂), and a right semicircular regionof FIG. 7A is a diagram showing a wavelength distribution of the lightemitting device in which the current blocking layer is formed of DBRaccording to one embodiment.

The light emitting device in the left semicircular region of FIG. 7A hasan average wavelength distribution of 450.9 nm, and the light emittingdevice in the right semicircular region of FIG. 7A has an averagewavelength distribution of 450.4 nm. From these results, it could beseen that there is no great difference in wavelength distribution oflight emitted from the light emitting device according to oneembodiment, compared to the conventional light emitting device.

A left semicircular region of FIG. 7B is a diagram showing an opticalpower of the light emitting device in which the current blocking layeris formed of silicon oxide (SiO₂), and a right semicircular region ofFIG. 7B is a diagram showing an optical power of the light emittingdevice in which the current blocking layer is formed of DBR according toone embodiment.

The light emitting device in the left semicircular region of FIG. 7B hasan optical power of 122.3 mW, and the light emitting device in the rightsemicircular region of FIG. 7B has an optical power of 124.5 mW. Fromthese results, it could be seen that the optical power of the lightemitting device according to one embodiment is improved, compared to theconventional light emitting device.

FIG. 8 is a diagram showing one embodiment of a light emitting devicepackage having the above-described light emitting device arrangedtherein.

A light emitting device package 400 according to one embodiment includeda body 410 including a cavity, first and second lead frames 421 and 422installed at the body 410, the above-described light emitting device 200according to one embodiment installed at the body 410 and electricallycoupled to the first and second lead frames 421 and 422, and a moldingpart 460 formed in the cavity.

The body 410 may be formed to include a silicon material, a syntheticresin material, or a metal material. Although not shown, when the body410 is made of a conductive material such as a metal material, a surfaceof the body 410 is coated with the insulation layer to preventelectrical short circuits between the first and second lead frames 421and 422. The cavity may be formed in the package body 410, and the lightemitting device 200 may be arranged on a bottom surface of the cavity.

The first lead frame 421 and the second lead frame 422 are electricallyseparated from each other to supply a current to the light emittingdevice 200. In addition, the first and second lead frames 421 and 422may reflect light generated at the light emitting device 200 to improvelight efficiency, and may radiate heat generated at the light emittingdevice 200.

The light emitting device 200 may be configured according to theabove-described embodiments, and thus may be electrically coupled to thefirst lead frame 421 and the second lead frame 422 by means of wires440.

The light emitting device 200 may be fixed in a bottom surface of thepackage body 410 using a conductive paste (not shown), and the moldingpart 460 may protect the light emitting device 200 by covering the lightemitting device 200. In this case, since the phosphor 470 is included inthe molding part 460, the phosphor 470 may be excited by light with afirst wavelength region emitted from the light emitting device 200 toemit light with a second wavelength region.

The one or plurality of light emitting devices according to theabove-described embodiments may be mounted on the light emitting devicepackage 400, but the disclosure is not limited thereto.

The above-described light emitting device and light emitting devicepackage may be used as a light source for lighting systems. By way ofexample, the light emitting device and light emitting device package maybe used in light emitting apparatuses such as backlight units for imagedisplay devices, lightings, etc.

When the light emitting device and light emitting device package is usedin the backlight units for image display devices, the light emittingdevice and light emitting device package may be used as an edge-typebacklight unit or a direct-type backlight unit. On the other hand, whenthe light emitting device and light emitting device package is used inthe lightings, the light emitting device and light emitting devicepackage may be used as a luminaire or a bulb-type light source.

As is apparent from the above description, the light emitting deviceaccording to one embodiment may have a point contact structure in whichthe first electrode and the second electrode come in contact with thefirst conductive semiconductor layer and the light-transmittingconductive layer, respectively, at the through hole and the open region.In this case, a DBR or an ODR may be used as the current blocking layer.Since the insulation layer is arranged at a region other than thethrough hole and the open region, a degree of absorption of lightreflected on the DBR or ODR, particularly light within a blue wavelengthregion, may be reduced, compared to the conventional light emittingdevice.

Therefore, the wavelength distributions of light emitted from the lightemitting device according to one embodiment does not significantlydiffer from that of the conventional light emitting device, and thus theoptical power may be improved, compared to the conventional lightemitting device.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device comprising: a lightemitting structure comprising a first conductive semiconductor layer, anactive layer, and a second conductive semiconductor layer; a firstcurrent blocking layer and a second current blocking layer arranged onthe light emitting structure to be separated from each other; alight-transmitting conductive layer arranged on the first currentblocking layer, the second current blocking layer and the light emittingstructure; a first electrode and a second electrode electrically coupledto the first conductive semiconductor layer and the second conductivesemiconductor layer, respectively; a through hole formed through thelight-transmitting conductive layer, the second conductive semiconductorlayer and the active layer to a portion of the first conductivesemiconductor layer; and a through electrode arranged inside the throughhole, wherein the through electrode non-overlaps with the first currentblocking layer in a vertical direction.
 2. The light emitting device ofclaim 1, further comprising an insulation layer arranged between thefirst electrode and the first current blocking layer and between thesecond electrode and the second current blocking layer.
 3. The lightemitting device of claim 2, wherein the through hole is formed throughthe insulation layer.
 4. The light emitting device of claim 1, whereinthe through electrode and the first current blocking layer are linearlyarranged in a horizontal direction.
 5. The light emitting device ofclaim 1, wherein the insulation layer is arranged in the through hole toextend around the through electrode.
 6. The light emitting device ofclaim 1, wherein the first electrode comprises a first bonding pad and afirst branched-finger electrode.
 7. The light emitting device of claim6, wherein the first bonding pad is arranged at a first edge region ofthe light emitting device.
 8. The light emitting device of claim 6,wherein at least a portion of the first branched-finger electrodeoverlaps the through electrode and the first current blocking layer in avertical direction.
 9. The light emitting device of claim 1, wherein thethrough electrode has a length smaller than a distance betweenneighboring through electrodes.
 10. The light emitting device of claim1, wherein the second electrode comprises a second bonding pad and asecond branched-finger electrode.
 11. The light emitting device of claim10, wherein the second bonding pad is arranged at a second edge regionof the light emitting device.
 12. The light emitting device of claim 10,wherein a portion of the second branched-finger electrode overlaps thesecond current blocking layer in a vertical direction.
 13. The lightemitting device of claim 1, wherein a portion of the insulation layer isopened to form an open region, and the light-transmitting conductivelayer is exposed through the open region.
 14. The light emitting deviceof claim 13, wherein the light-transmitting conductive layer and thesecond electrode are brought into direct contact at the open region. 15.The light emitting device of claim 13, wherein the open region and thethrough electrode are alternately arranged in a horizontal direction.16. The light emitting device of claim 1, wherein at least one of thefirst current blocking layer and the second current blocking layer is adistributed Bragg reflector (DBR) or an omni-directional reflector(ODR).
 17. A light emitting device comprising: a light emittingstructure comprising a first conductive semiconductor layer, an activelayer, and a second conductive semiconductor layer; a first currentblocking layer and a second current blocking layer having a DBR or ODRstructure and arranged on the light emitting structure to be separatedfrom each other; a light-transmitting conductive layer arranged on thefirst current blocking layer, the second current blocking layer and thelight emitting structure and having the smallest thickness at regionscorresponding respectively to the first current blocking layer and thesecond current blocking layer; a first electrode and a second electrodeelectrically coupled to the first conductive semiconductor layer and thesecond conductive semiconductor layer, respectively; a through holeformed through the light-transmitting conductive layer, the secondconductive semiconductor layer, and the active layer to a portion of thefirst conductive semiconductor layer; and a through electrode arrangedin the through hole.
 18. The light emitting device of claim 17, whereinthe first current blocking layer has a plurality of portions arrangedspaced apart from each other.
 19. The light emitting device of claim 18,wherein the through hole is formed through the light-transmittingconductive layer, the second conductive semiconductor layer, and theactive layer to a portion of the first conductive semiconductor layer,the light emitting device further comprises a through electrode arrangedin the through hole, and a spacing between the portions constituting thefirst current blocking layer is the same as a length of the throughhole.
 20. A light emitting device comprising: a light emitting structurecomprising a first conductive semiconductor layer, an active layer, anda second conductive semiconductor layer; a first current blocking layerand a second current blocking layer arranged on the light emittingstructure to be separated from each other; a light-transmittingconductive layer arranged on the first current blocking layer, thesecond current blocking layer and the light emitting structure; a firstelectrode and a second electrode electrically coupled to the firstconductive semiconductor layer and the second conductive semiconductorlayer, respectively; and an insulation layer arranged between the firstelectrode and the first current blocking layer and between the secondelectrode and the second current blocking layer, wherein a through holeis formed through the insulation layer, the light-transmittingconductive layer, the second conductive semiconductor layer, and theactive layer to a portion of the first conductive semiconductor layer,the through hole does not overlap the first current blocking layer in avertical direction, a portion of the insulation layer is opened to forman open region, and the light-transmitting conductive layer is exposedthrough the open region, and the open region and the through electrodeare alternately arranged in a horizontal direction.